| PART |
Description |
Maker |
| DN100 |
Extremely low collector-to-emitter saturation voltage
Suitable for low voltage large current drivers
|
KODENSHI KOREA CORP.
|
| PZTA29 |
Applications requiring extremely high current gain at collector currents to 500mA
|
Fairchild Semiconductor
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
